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1/13 february 2002 stp2nc70z, stp2nc70zfp STD1NC70Z, STD1NC70Z-1 n-channel 700v - 7.3 w - 1.4a to-220/fp/dpak/ipak zener-protected powermesh?iii mosfet n typical r ds (on) = 7.3 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n very low intrinsic capacitances description the third generation of mesh overlay ? power mosfets for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back zener diodes between gate and source. such arrangement gives extra esd capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications.. applications n single-ended smps in monitors, computer and industrial application n welding equipment ordering information type v dss r ds(on) i d pw stp2nc70z stp2nc70zfp STD1NC70Z STD1NC70Z-1 700 v 700 v 700 v 700 v < 8.5 w < 8.5 w < 8.5 w < 8.5 w 1.4 a 1.4 a 1.4 a 1.4 a 50 w 25 w 45 w 45 w sales type marking package packaging stp2nc70z p2nc70z to-220 tube stp2nc70zfp p2nc70zfp to-220fp tube STD1NC70Zt4 d1nc70z dpak tape & reel STD1NC70Z-1 d1nc70z ipak tube to-220 to-220fp ipak 1 2 3 dpak 3 2 1 1 3
stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 2/13 absolute maximum ratings ( l ) pulse width limited by safe operating area (1) i sd 10a, di/dt 200a/s, v dd v (br)dss , t j t jmax. (*) limited only by maximum temperature allowed thermal data avalanche characteristics gate-source zener diode note: 3. d v bv = a t (25-t) bv gso (25) (#) when mounted on minimum footprint protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the devices esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the devices integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit stp2nc70z stp2nc70zfp STD1NC70Z STD1NC70Z-1 v ds drain-source voltage (v gs = 0) 700 v v dgr drain-gate voltage (r gs = 20 k w ) 700 v v gs gate- source voltage 25 v i d drain current (continuos) at t c = 25c 1.4 1.4 (*) 1.4 a i d drain current (continuos) at t c = 100c 0.9 0.9 (*) 0.9 a i dm ( l ) drain current (pulsed) 5.6 5.6 (*) 5.6 a p tot total dissipation at t c = 25c 50 25 45 w derating factor 0.4 0.2 0.36 w/c i gs gate-source current (dc) 50 ma v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k w) 2000 v dv/dt (1) peak diode recovery voltage slope 3 v/ns v iso insulation withstand voltage (dc) - 2500 - v t j t stg operating junction temperature storage temperature -65 to 150 -65 to 150 c c to-220 to-220fp dpak ipak rthj-case thermal resistance junction-case max 2.5 5 2.75 c/w rthj-pcb thermal resistance junction-pcb max (for smd) (#) 100 c/w rthj-amb thermal resistance junction-ambient max 62.5 100 c/w t l maximum lead temperature for soldering purpose 300 275 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1.4 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 60 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 25 v a t voltage thermal coefficient t=25c note(3) 1.3 10 -4 /c
3/13 stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 electrical characteristics (tcase =25c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 700 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 0.7 a 7.3 8.5 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 0.7 a 1.2 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 305 34 3.6 pf pf pf c oss eq. (3) equivalent output capacitance v gs = 0v, v ds = 0v to 560v 28 pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 350 v, i d = 0.8 a r g = 4.7 w v gs = 10 v (resistive load see, figure 3) 11 8 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 560v, i d = 1.6 a, v gs = 10v 8 2 3.8 12 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 350 v, i d = 0.8 a r g =4.7 w v gs = 10 v (resistive load see, figure 3) 27 30 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 560v, i d = 1.6 a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 20 5 25 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 1.4 5.6 a a v sd (1) forward on voltage i sd = 1.4 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.6 a, di/dt = 100a/s v dd = 30v, t j = 150c (see test circuit, figure 5) 370 1.3 6.8 ns c a
stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 4/13 safe operating area for to-220fp safe operating area for to-220 thermal impedance for to-220 thermal impedance for to-220fp safe operating area for dpak/ipak thermal impedance for dpak/ipak
5/13 stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 gate charge vs gate-source voltage capacitance variations output characteristics static drain-source on resistance transfer characteristics transconductance
stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 6/13 normalized bvdss vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized gate threshold voltage vs temp.
7/13 stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 8/13 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
9/13 stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 10/13 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
11/13 stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 12/13 tape and reel shipment (suffix t4)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
13/13 stp2nc70z, stp2nc70zfp, STD1NC70Z, STD1NC70Z-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com

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